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lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 description the lx5503 is a power amplifier optimized for the fcc unlicensed national information infrastructure (u-nii) band and hiperlan2 applications in the 5.15-5.85ghz frequency range. the pa is im- plemented as a two-stage monolithic microwave integrated circuit (mmic) with active bias and input/output pre- matching. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with +25dbm of p1db and 22db power gain between 5.15-5.35ghz and 18db gain up to 5.85ghz. for +18dbm ofdm output power (64qam, 54mbps), the pa provides a very low evm (error-vector magnitude) of 4%, and consumes less than 200ma total dc current. the lx5503 is available in a 16-pin 3mmx3mm micro-lead package (mlp). the compact footprint, low profile, and excellent thermal capability of the mlp package makes the lx5503 an ideal solution for broadband, medium-gain power amplifier requirements for ieee 802.11a, and hiperlan2 portable wlan applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features advanced ingap hbt 5.15-5.85ghz operation single-polarity 3.3v supply low quiescent current icq ~100ma p1db ~ +25dbm across 5.15~5.85ghz power gain ~ 22db at 5.25ghz & pout=18dbm power gain ~ 18db at 5.85ghz & pout=18dbm total current < 200ma for pout=18dbm evm ~ 4% for 64qam/ 54mbps & pout=18dbm excellent temperature performance simple input/output match minimal external components small footprint: 3x3mm 2 low profile: 0.9mm applications/benefits fcc u-nii wireless ieee 802.11a hiperlan2 product highlight package order info t j ( c) lq plastic 16-pin -40 to 85 LX5503-LQ note: available in tape & reel (3k parts per reel). append the letter ?t? to the part number. (i.e. LX5503-LQt) this device is classified as esd level 1 in accordance with mil- std-883, method 3015 (hbm) testi ng. appropriate esd procedures should be observed when handling this device. l l x x 5 5 5 5 0 0 3 3
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 absolute maximum ratings dc supply voltage, rf off................................................................................6v collector current.........................................................................................500ma total power dissipation...................................................................................3 w rf input power ...........................................................................................10dbm operation ambient temperature ....................................................... -40 to +85 o c storage temperatur e ........................................................................ -60 to +150 o c note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . package pin out 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 lq p ackage (bottom view) functional pin description pin name pin number description rf in 2, 3 rf input for the power amplifier. this pin is dc-shorted to gnd but ac-coupled to the transistor base of the first stage. for 5.15-5.35g hz this pin is pre-matched to 50 ? . vb1 6 bias current control voltage for the first stage. vb2 7 bias current control voltage for the second stage. the vb2 pin can be connected with the first stage control voltage (vb1) into a single refer ence voltage (referred to as vref) through an external resistor bridge(r1/r2). vcc 9 supply voltage for the bias reference and control circuits. the vcc feed line should be terminated with a 1 f bypass capacitor as close to the device as possible. this pin can be combined with both vc1 and vc2 pins, resulting in a single supply voltage (referred to as vc). rf out 10, 11 rf output for the power amplifier. this pin is ac-coupled and does not require a dc-blocking capacitor. vc1 15 power supply for first stage amplifier. the vc1 feedline should be terminated with a 220pf bypass capacitor as close to the device as possible, followed by a 1 f bypass capacitor at the supply side. this pin can be combined with vc2 and vcc pins, resulting in a single supply voltage (referred to as vc). vc2 14 power supply for second stage amplifier. the vc2 feedline should be terminated with a 220pf bypass capacitor as close to the device as possible, followed by a 1 f bypass capacitor at the supply side. this pin can be combined with vc1 and vcc pins, resulting in a single supply voltage (referred to as vc). gnd the center metal base of the mlp package prov ides both dc and rf ground as well as heat sink for the power amplifier. p p a a c c k k a a g g e e d d a a t t a a
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 electrical characteristics test conditions: vcc=3.3v, vref=2.86v, icq=100ma, t a =25c. parameter condition symbol min. typ. max. min. typ. max. unit frequency range f 5.15 5.35 5.7 5.85 ghz output power at 1db compression pout 24 25 24 25 dbm power gain at pout=18dbm gp 20 22 16 18 db evm at pout=18dbm 64qam/54mbps 4 4 % total current at pout=18dbm ic_total 200 180 ma quiescent current icq 100 100 ma bias control reference current for icq=100ma iref 1.6 1.6 ma small-signal gain s21 21 17 db gain flatness over 100mhz ? s21 +/-0.2 +/-0.5 db gain variation over temperature -40 to +85 o c ? s21 +/-1 +/-1 db input return loss s11 -15 -10 -12 -10 db output return loss s22 -9 -10 db reverse isolation s12 -40 -40 db second harmonic pout = 18dbm -45 -42 dbc third harmonic pout = 18dbm -37 -37 dbc noise figure nf 6 6 db ramp-on time 10~90% ton 100 100 ns note: all measured data was obtained on a 5 m il getek evaluation board without heat sink. e e l l e e c c t t r r i i c c a a l l s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts typical power sweep data at room temperature (vc=3.3v, vref=2.86v, icq=100ma) -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pin (dbm) -5 0 5 10 15 20 25 30 pout gain freq.=5.15ghz -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pin (dbm) -5 0 5 10 15 20 25 30 pout gain freq.=5.25ghz -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 pin (dbm) -5 0 5 10 15 20 25 30 pout gain freq.=5.85ghz c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts typical evm & total current vs. output power (vc=3.3v, vref=2.86v, icq=100ma, 64qam/54mbps) 12 13 14 15 16 17 18 19 20 21 pout (dbm) 0 1 2 3 4 5 6 7 8 100 150 200 250 300 evm_in evm_out ictotal freq.=5.15ghz 12 13 14 15 16 17 18 19 20 21 pout (dbm) 0 1 2 3 4 5 6 7 8 100 150 200 250 300 evm_in evm_out ictotal freq.=5.25ghz 9 1011121314151617181920 pout (dbm) 0 1 2 3 4 5 6 7 8 100 150 200 250 300 evm_in evm_out ictotal freq.=5.85ghz c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts typical s-parameter data at room temperature 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.0 6.0 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -50 25 frequency, ghz vc=3.3v vref=2.81v icq=80ma 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.0 6.0 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -50 25 frequency, ghz vc=3.3v vref=2.86v icq=100ma 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.0 6.0 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -50 25 frequency, ghz vc=3.3v vref=2.98v icq=160ma c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 7 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts quiescent current vs. vref (vc1=vc2=vcc=vc=3.3v) 2.75 2.8 2.85 2.9 2.95 3 3.05 vref (v) 50 75 100 125 150 175 200 225 250 power down isolation (vc=3.3v, vref=0 to 1v, icq<2a) 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 4.5 6.0 -30 -20 -10 -40 0 vref=0v vref=1v frequency (ghz) vref=0v vref=1v c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 8 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts power, evm & current for low quiescent current (recommended for high efficiency operation) (vc=3.3v, vref=2.81v, icq=80 ma, freq.=5.25ghz) power & gain vs. pout -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pin (dbm) -5 0 5 10 15 20 25 30 pout gain evm & total current vs. pout 14 15 16 17 18 19 20 21 pout (dbm) 0 1 2 3 4 5 6 7 8 100 150 200 250 300 evm_in evm_out ictotal c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 9 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts power, evm & current for high quiescent current (recommended for high gain operation) (vc=3.3v, vref=2.98v, icq=160 ma, freq.=5.25ghz) power & gain vs. pout -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pin (dbm) 0 5 10 15 20 25 30 pout gain evm & total current vs. pout 13 14 15 16 17 18 19 20 pout (dbm) 0 1 2 3 4 5 6 7 8 100 150 200 250 300 evm_in evm_out ictotal c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 10 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts s-parameter variation over temperature (vc=3.3v, vref=2.98v, icq= 160ma at room temperature) 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 4.5 6.0 11 12 13 14 15 16 17 18 19 20 21 22 23 10 24 +85 o c frequency (ghz) +25 o c -40 o c - power & gain variation over temperature (vc=3.3v, vref=2.86v, icq=100ma at room temperature, freq.=5.25ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 10 12 14 16 18 20 22 24 26 pout (dbm) +85 +25 -40 o o o c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 11 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 charts small-signal gain vs. supply voltage (vref=2.86v, icq=100ma for vc=3.3v) 3 3.1 3.2 3.3 3.4 3.5 3.6 vc (v) 20 20.5 21 21.5 22 p1db vs. supply voltage (vref=2.86v, icq=100ma for vc=3.3v) 33.33.6 vc (v) 24 24.5 25 25.5 26 26.5 27 c c h h a a r r t t s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 12 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 mechanical drawing lq 16-pin mlpq plastic (3x3mm ep) g a b f h e c d d1 i m illimeters i nches dim min max min max a 3.00 bsc 0.118 bsc b 3.00 bsc 0.118 bsc c 0.80 1.00 0.031 0.039 d 0.18 0.30 0.007 0.011 d1 0 0.05 0 0.002 e 1.30 1.55 0.051 0.061 f 0.18 0.30 0.007 0.011 g 0.50 bsc 0.019 bsc h 1.30 1.55 0.051 0.061 i 0.30 0.50 0.011 0.020 note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006?) on any side. lead dimension shall not include solder coverage. m m e e c c h h a a n n i i c c a a l l s s
lx5503 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 13 www. microsemi . com ingap hbt 5-6ghz power amplifier integrated products copyright ? 2000 rev. 1.1, 9/16/2002 notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s

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